High field‐effect mobility amorphous InSnZnO thin‐film transistors with low carrier concentration and oxygen vacancy

Abstract

The influence of carrier concentration and oxygen vacancy on the performance of amorphous-indium–tin–zinc-oxide (a-ITZO) thin-film transistors (TFTs) is reported. The ITZO TFT with lowest carrier concentration and oxygen vacancy has a high field-effect mobility (μ FE) of 37.2 cm2/V•s, a high on/off current ratio (I ON/I OFF) of ∼1 × 107 and a low subthreshold swing (SS) of 0.93 V/decade. By increasing the carrier concentration and oxygen vacancy, μ FE, I ON/OFF and SS were surprisingly degraded to 14.4 cm2/V•s, ∼4 × 104 and 4.01 V/decade, respectively. By controlling the carrier concentration and oxygen vacancies of ITZO bulk, improvement of the performance in TFT devices can be achieved. The proposed high μ FE of 37.2 cm2/V•s is enough for the application of next-generation displays requiring ultra-high resolution and high-frame-rate displays.