Abstract
On the basis of the principle of deriving the Fermi-Dirac distribution function, a general expression of the carrier distribution function taking into account the effect of applied electric field has been deduced. Theoretically, this general expression can be used to analyze any carrier transport phenomena in both nondegenerate and degenerate semiconductors with either parabolic or nonparabolic band structure. Using this general expression, the Boltzmann transport equation has been solved analytically for low and high temperatures. Some computed results are presented, and discussion and comparison with other available results are given.
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