Abstract
The development of reliable oxides built on SiC has become a very important issue with respect to either passivation processes or metal-oxide-semiconductor (MOS) applications. The aim of this paper is to present a detailed investigation of Fowler-Nordheim electron injections in n-type silicon carbide (SiC) MOS capacitors. A systematic variation in the temperature and in the average oxide field E OX applied during the stress allowed us to evidence both a positive charge and electron trapping. The positive charge build-up is shown to emerge above a threshold field close to 7 MV cm −1 . It decreases with temperature, and can be dissociated into two different exponential time processes. The overall results agree with mechanisms based on impact ionization in the oxide, leading to pair creation and subsequent hole trapping.
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