Abstract
High temperature (>200°C) Fe implantation in InP has been proved to be a suitable method to obtain high substitutional Fe concentrations ([ Fe 2+]>10 18 cm −3) , without substantial defect generation and Fe precipitation. Electrical (current–voltage), deep level (photo-induced current transient spectroscopy) and optical (photoluminescence) measurements have been used to assess the behaviour of the activated Fe fraction, which is compared with the total Fe concentration evaluated by secondary ion mass spectrometry. Our results show no detrimental effects on the electrical (and optical) Fe related properties for Fe peak concentrations as high as 2×10 19 cm −3 , in spite of a large inactive Fe fraction. A strong correlation between Fe activation and background n-doping concentration has been put in evidence.
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