Abstract
AlGaN-based UV-A LEDs have wide applications in medical treatment and chemical sensing; however, their efficiencies are still far behind visible LEDs or even shorter wavelengths UV-C counterparts because of the large lattice mismatch between the low-Al-content active region and the AlN substrate. In this report, we investigated the composition and thickness of the quantum barrier in the active region in terms of LED performance. Due to the improved strain management and better carrier confinement, efficient UV-A LEDs (320 nm - 330 nm) with EQEs up to 6.8% were demonstrated, among the highest efficiencies at this wavelength range.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
