Abstract
This study reports the dosimetric response of a (ZnO)0.2(TeO2)0.8 thin film sensor irradiated with high-energy X-ray radiation at various doses. The spray pyrolysis method was used for the film deposition on soda-lime glass substrate using zinc acetate dehydrate and tellurium dioxide powder as the starting precursors. The structural and morphological properties of the film were determined. The I-V characteristics measurements were performed during irradiation with a 6 MV X-ray beam from a Linac. The results revealed that the XRD pattern of the AS-deposited thin film is non-crystalline (amorphous) in nature. The FESEM image shows the non-uniform shape of nanoparticles agglomerated separately, and the EDX spectrum shows the presence of Te, Zn, and O in the film. The I-V characteristics measurements indicate that the current density increases linearly with X-ray doses (0-250 cGy) for all applied voltages (1-6 V). The sensitivity of the thin film sensor has been found to be in the range of 0.37-0.94 mA/cm2 /Gy. The current-voltage measurement test for fading normalised in percentage to day 0 was found in the order of day 0 > day 15 > day 30 > day 1 > day 2. These results are expected to be beneficial for fabricating cheap and practical X-ray sensors.
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