High energy Si ions bombardment effects on the properties of nano-layers of SiO2/SiO2 + Ag

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We grew 50 periodic SiO2/SiO2+Ag multi-layers by electron beam deposition technique. The co-deposited SiO2+Ag layers are 7.26nm, SiO2 buffer layers are 4nm, and total thickness of film was determined as 563nm. We measured the thickness of the layers using in situ thickness monitoring during deposition, and optical interferometry afterwards. The concentration and distribution of Ag in SiO2 were determined using Rutherford backscattering spectrometry (RBS). In order to calculate the dimensionless figure of merit, ZT, the electrical conductivity, thermal conductivity and the Seebeck coefficient of the layered structure were measured at room temperature before and after bombardment with 5MeV Si ions. The energy of the Si ions was chosen such that the ions are stopped deep inside the silicon substrate and only electronic energy due to ionization is deposited in the layered structure. Optical absorption (OA) spectra were taken in the range 200–900nm to monitor the Ag nanocluster formation in the thin layers.