Abstract
MgO/GaN metal oxide semiconductor diodes were irradiated with 40 MeV protons at a fluence of 5 X 10 9 cm - 2 , simulating long-term (10 yr) exposure in space-born applications. The result of the proton irradiation was a decrease in device capacitance, consistent with the creation of deep electron traps that reduce the effective channel doping and also a decrease in breakdown field from ∼10 6 V cm - 1 in control devices to 0.76 X 10 6 V cm - 1 in devices irradiated with the gate metal in place. The capacitance of the device irradiated with the contacts in place recovers to the same value as the contact diodes. The D i t values are decreased by the H 2 anneal in both the unirradiated and irradiated devices.
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