High energy implantation and annealing of phosphorus in silicon

Abstract

The properties of silicon single crystals after 1 MeV phosphorus implantation with doses in the range of 5 × 10 11 to 7.5 × 10 14 cm −2 - and annealed by different methods are investigated. The ion range is about 1 Am. A good agreement between the experimental profiles and theoretical ones calculated using a modified TRIM code is stated considering the Brandt-Kitagawa theory for the electronic stopping power. In the as-implanted state no amorphization is observed for a dose of 7.5 × 10 14 cm −2 although nuclear energy deposition was above the theoretical amorphization threshold. Spreading resistance measurements indicate that the radiation damage extends up to a dose-dependent depth between 1.8 and 6 μm. After annealing, a defect band of dislocations and stacking faults is formed at about R max . By C-t measurements of the low dose sample a defect peak slightly behind the maximum of the ion profile is detected. Spreading resistance measurements show that the deep tail of radiation damage is not completely removed by the investigated annealing treatments.