High energy hydrogen and helium ion implanter

Abstract

High energy hydrogen and helium ion implants are required for enhancing performance of advanced power devices, such as improving breakdown voltage and switching response for IGBT products. The Varian Semiconductor Equipment business unit of Applied Materials has employed the VIISta platform architecture to provide production level throughputs of high energy hydrogen and helium for both standard and thin wafer substrates. Improvements to the implanter architecture will be described. The beam optics optimization, including the charge-exchange resonance and light species transport, will be discussed. The design and implementation of the radiation mitigation system, which meets industry standards for radiation limits and allows for operation in a typical production environment, will be described. Overall productivity and thin wafer implant capability are presented.