Abstract
We demonstrated a new type of metal-oxide heterostructures, Gallium-Doped Zinc Oxide (Ga:ZnO) as a saturable absorber (SA) for the generation of a Q-switched laser operating in the 1.55 μm region. The Ga:ZnO was fabricated by a sonochemical approach and then it used the embedding method to combine it with polyvinyl alcohol (PVA) to form a thin film. The Ga:ZnO PVA film was effectively incorporated into a ring cavity to produce a Q-switched pulse laser. The Ga:ZnO PVA film has a modulation depth of ∼13 % with a saturation intensity of 0.09 MW/cm2. The high pulse energy and maximum average output power of 315.76 nJ and 16.12 mW were achieved. The SA film has a repetition rate within a range of 25.94 to 51.05 kHz, while the pulse width decreased from 10.93 µs to 2.215 µs, respectively. This is the first time that Ga:ZnO PVA has been used in fiber laser applications.
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