Abstract
High energy (a few MeV) As+ was uniformly implanted into 2'' Si (111) wafers at doses of 1013–1016 cm-2. Implanted As profiles were precisely measured by the Rutherford backscattering method (RBS) over a wide energy range (0.5–2.5 MeV). Experimental values for Rp and ΔRp were larger than the LSS calculation values by about 15% and 30%, respectively. After annealing, carrier profiles were measured by the differential sheet resistance and C-V methods. They agreed well with a Gaussian distribution, defined by Rp and ΔRp measured by RBS, from peak to surface over 4 figures of concentration. Implanted As is easily activated by 700°C annealing with low doses (∼1014 cm-2). Activation ratio depends mainly on peak arsenic concentration and not on implantation energy.
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