Abstract
We have intermixed GaAs/(AlGa)As multiquantum structures for waveguides and lasers by 3 MeV Ar implantation and 850 °C, 30 min closed-tube annealing. Buried-heterostructure lasers defined by Ar mixing had threshold currents of 100 mA for 370-μm-long devices. As waveguides for 1.15 μm light, the devices exhibited losses of 25 cm−1 in the annealed, implanted regions, and 15 cm−1 in unimplanted regions defined by adjacent implants. Analysis of the results illustrates important considerations for implant mixing for waveguide formation.
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