Abstract
To realize a high current under focusing operation we investigated the structure of double-gated field emitter arrays (FEAs) and tried to anodize the tip of the silicon emitters. It was found from these investigations that the FEAs with the thick extraction gate could maintain high emission current during focusing operation. Furthermore, the anodized Si FEAs with thick extraction gate achieved a high emission current per tip of about 300 nA under focusing operation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
