Abstract
ABSTRACTThe enhanced high temperature gate metallizations consisting of sputtered TiWSi or TiWN were investigated in order to attain high temperature stability at temperatures in excess of 250°C. The TiWN/Au system resulted in a sheet resistance of only 11.5 mΩ/□ while TiWSi/Au resulted in 75.0 mΩ/□. The HEMTs and FETs processed with additional stable ohmic contacts of epitaxial Ge/Pd structures exhibited a stable transconductance of 160 -180 mS/mm at temperatures of 300°C. Thermal analysis indicated the peak junction temperature increase with an input power of 200mW to be less than 18°C at substrate temperature of 60°C.
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