Abstract
High-quality InAs0.8Sb0.2 lattice matched to AlSb has been successfully grown on semi-insulating InP substrates by gas source molecular beam epitaxy using an AlSb/AlAs0.5Sb0.5 buffer layer structure. Due to the inserted AlAs0.5Sb0.5 layer between AlSb and InP, a two-dimensional growth mode is always maintained during the growth. Despite the large lattice mismatch between the InAs0.8Sb0.2 epilayer and InP substrate, the room temperature electron mobility of a 2000 A thick InAs0.8Sb0.2 has reached ∼15 000 cm2/V s. Compared with InAs0.8Sb0.2 grown on GaAs using a single AlSb buffer layer, this method requires a thinner (≤1 μm) buffer layer structure.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callSimilar Papers
More From: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
