Abstract
We report on the realization of high electron mobility (over103 cm2 V−1 s−1) in structure-ordered and lattice-strained hydrogenated nanocrystalline silicon (nc-Si:H)due to the decrease of conduction effective mass and phonon scattering. The nc-Si:H thinfilms were grown on crystalline silicon substrates by plasma-enhanced chemical vapourdeposition through the radio-frequency power to properly control the chemical reactions ofH atoms with the Si–Si network. The electron mobility and concentration in the nc-Si:Hhave been extracted with the aid of magnetic-field-dependent Hall effect measurements.X-ray diffraction, Raman, and infrared transmission experiments have been employed toyield information about the lattice strain and structural order in the Si nanocrystals. Theroom-temperature experimental mobility has been well explained by a generalized Drudetransport model unifying both the diffusive and ballistic transport mechanisms.
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