Abstract
Our study explores growth techniques and the electrical/optical behavior of InAs0.7Sb0.3 compounds on GaAs substrates, utilizing various metamorphic buffer layers. The InAlSb graded-buffer layer emerged as the most promising, displaying a remarkable electron mobility of 26,370 cm/V∙s, a record high. It signifies excellent lateral crystal quality for room-temperature carrier transport. Meanwhile, the presence of micro-twins, evident in cross-sectional TEM images, degrades vertical crystal quality. We further assess crystal quality through low-temperature Hall mobility and photoresponses, featuring reduced bowing parameters. These findings offer valuable insights for optimizing metamorphic growth platforms for ternary InAsSb compounds.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
