Abstract

The minority carrier electron mobility in the base of InP/GaInAs HBTs was measured as a function of temperature using a new magneto transport method. At room temperature the mobility was found to be as high as 3400 cm/sup 2/ V/sup -1/ sec/sup -1/ at a base doping level of 3.4/spl times/10/sup 19/ cm/sup -3/. The measured mobility was compared with calculations carried out using the dielectric function formalism. The dominant scattering mechanisms are ionized impurity scattering and coupled LO phonon-plasmon scattering. The calculations correctly predict the high temperature mobility. At low temperatures a Monte Carlo analysis must be performed to model the experimental results because the electron distribution is nonthermal. The momentum relaxation rate strongly depends on the electron energy due to the elastic nature of the coupled LO phonon-plasmon scattering at low electron energy.

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.