Abstract
We have successfully fabricated uniaxially strained SOI FinFETs with high electron mobility and low parasitic resistance. The electron mobility on (110) sidewall surfaces was found to surpass the (100) universal mobility by the subband engineering through uniaxial tensile strain along . Thanks to this high electron mobility enhancement and the relatively low parasitic resistance, high Ion enhancement of +38% and the Ion value of 900 ?A/?m in 50 nm gate length n-FinFETs with (110) surfaces were realized.
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