Abstract
A technique has been developed for measuring and studying high electric fields in CdS crystals. Fields are produced by a transparent blocking electrode in direct contact with a conducting crystal. D.C. field-effect experiments have been used to measure the magnitude of the electric field and its distribution within the crystal. Electro-optic effects occur in fields greater than 10 5 V/cm and dielectric breakdown occurs in fields greater than 10 6 V/cm. The main electro-optic effect is a shift of the optical band edge to longer wavelengths with increasing fields. Dielectric breakdown field strengths have been measured in a variety of crystals. The mechanism of dielectric breakdown has been studied by several kinds of experiments including measurement of pre-breakdown currents as a function of field and study of the behavior of optically injected carriers as breakdown proceeds. A comparison of results with theoretical treatments of dielectric breakdown indicates that the breakdown is due to tunneling.
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