Abstract
The semiconductor alloy GaAsSb is commonly found in many types of semiconductor devices, ranging from high electron mobility transistors to solar cells. Yet, surprisingly little is known about its transport properties. Here, we theoretically determine the high field transport properties of electrons and holes in the alloy GaAs0.51Sb0.49 that is lattice matched to InP and, in particular, is used in a great many of these types of semiconductor devices.
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