Abstract
Diode devices n/i/Pt and n/i/p(Sb 2S 3) were fabricated using high-quality wide bandgap a-Si:H (bandgap ∼1.85 eV) for the intrinsic photoactive layers to investigate high electric field transport of photoexcited carriers. Time-resolved photoresponse was examined by a transient current method. It was shown that primary and secondary photocurrents were distinguished by the transient photocurrent method. The n/i/Pt diode device showed a photocurrent gain as large as 10 3 but its response was slow, 5 ms, which is associated with secondary photocurrent. The use of p-type Sb 2S 3 for electron blocking layer instead of Pt successfully suppressed the secondary photocurrent. Fast photoresponse with a response time <50 μs was observed in this device. The mechanism of the dark current leak was associated with shallow defect states at the i/p(Sb 2S 3) interface through a thermally-excited process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
