Abstract
Electric field (E SD) dependence of negative magnetoresistance in silicon (001) MOS inversion layers has been measured at the field from 0.4 V/m to 1000 V/m at 1.1 K and 4.2 K. The E SD-dependence of the negative magnetoresistance is explained by E SD-dependence of inelastic scattering time of electrons due to the change in electron temperature by the field. Energy transfer of electrons to the lattice is well explained by the surfon scattering theory with the bulk value of deformation potential constant for the SiSiO 2 interface.
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