Abstract
AbstractWe have characterized the high electric field breakdown process of several epitaxial 4H-SiC p-n structures with oxide passivation. The breakdown voltage was found to be dependent on the size of the diode structures as well as their proximity to any structural defects. The time dependence of the breakdown process was also measured to determine the characteristics of the breakdown mechanism. This time dependence measurement provides an indication of the quality of the diode structures. Both soft and abrupt breakdown mechanisms were observed showing the influence of defects on the high field behavior of the diode structures. Measurements done with and without the use of Fluorinert fluid did not show any difference in the breakdown voltage indicating that surface flashover breakdown mechanism did not play a major role in the avalanche breakdown process.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
