Abstract
Silicon p+nn+ TRAPATT diodes have given X-band amplification with added power efficiencies of up to 25% and fundamental X-band oscillation with efficiencies as high as 35%. The diodes are fabricated by an Integral Heat Sink (IHS) technology and the p+n junction is formed by a combination of ion implantation and a drive-in period. Double-sided heat sinking has enabled oscillator performance to be extended to pulse-widths of greater than 5 microseconds, and mean output powers of 1 Watt have been recorded. Coaxial amplifier circuits produced small signal gains of 9dB, and large signal gains of 4dB with 1dB bandwidths of 500 MHz at 9.25 GHz with RF peak powers of over 12 watts. The design and performance of both coaxial and microstrip circuits is discussed.
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