Abstract
A quantum efficiency of UV light-emitting diodes (LEDs) is limited by high-density of threading dislocations and low light extraction efficiency. In this paper, we present high-efficiency UV-LEDs, which have peak wavelengths ranging from 323 to 363 nm, fabricated on high-quality Al0.22Ga0.78N base layer with low dislocation density. Our UV-LEDs, which include a high quality double heterostructure with dislocation density as low as 2 × 107 cm—2, have high output powers of more than 0.1 mW at 50 mA forward current in all the wavelength range. We also aim further improvement of output power with the evaluation of device structure which has high light extraction efficiency. Since a modified LED structure avoids light absorption loss at bonding pad electrode, the higher output power of 3.2 mW at 100 mA driving current was achieved with 363 nm emission wavelength.
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