Abstract
We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p–i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1–10.2% for a-Si:H single-junction solar cells (absorber thickness: ti = 220–310 nm) and 12.69% for an a-Si:H (ti = 350 nm)/hydrogenated microcrystalline silicon (µc-Si:H) tandem solar cell fabricated using textured SnO2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are ∼10 and 3%, respectively, under 1 sun illumination at 50 °C for 1000 h.
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