Abstract
An integrated power distributed amplifier, fabricated in a low-cost 2-μm GaAs heterojunction bipolar transistor (HBT) technology, is implemented in this letter. A tapered collector line structure combined with the input capacitive coupling technique is used to improve the bandwidth and power efficiency simultaneously. The measurement results give a gain of 8.1dB with a gain flatness of ±0.5dB over a frequency range from 1 to 12 GHz. The output 1-dB compressing point is 13.9 dBm at 5 GHz and the associated power-added efficiency is 21.9%. Our work presents very good figure of merit among the recently published distribution amplifiers with different technologies. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26126
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