Abstract
A low cost, high efficiency silicon MOSFET using 0.6 /spl mu/m LDMOS (LV3) technology was developed in Motorola for high frequency (1-2 GHz) and low voltage (3.4-12.5 V) wireless applications. The LV3 devices can deliver 77% power added efficiency (PAE) with 12 dB gain, 28.7 dBm output power at 3.4 V and 850 MHz. The LV3 devices also can provide 70% PAE, 11 dB gain, 36 dBm Pout at 6 V, 850 MHz and 50% PAE, 9 dB gain, 33 dBm Pout at 5.8 V, 1.9 GHz. This is the best known RF performance for silicon devices at 3.4 V and 6 V.
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