Abstract
Silicon solar cell efficiencies of 16.9% have been achieved on 0.2 Ω cm float zone silicon, using a simplified cost effective rapid thermal process (RTP). Although the individual processing steps are not fully optimized yet, this represents the highest reported efficiency for solar cells processed with simultaneous front and back diffusion with no conventional high-temperature furnace steps. A diffusion temperature schedule coupled with an added short in situ slow cooling during RTP resulted in greater than 200 μm diffusion length and appropriate diffusion profiles for high efficiency cells. Plasma enhanced chemical vapor deposition (PECVD) of SiN/SiO2 was used for surface passivation and antireflection coating. Conventional cells fabricated by furnace diffusions and oxidations gave an efficiency of 18.8%. Process optimization can further reduce the gap between the conventional and RTP/PECVD cells.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
