Abstract
We demonstrate that introducing a thin CFx film formed by plasma polymerization of CHF3 on an indium tin oxide (ITO) anode surface for a polymer light-emitting diode with the structure, ITO∕CFx∕poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene vinylene](MEH-PPV)∕Ca∕Al, can lead to a high device performance (5.1cd∕A and 24000cd∕m2). The high device performance can be attributed to a better balance between hole and electron fluxes, resulting from a formation of interfacial dipole at the CFx∕MEH-PPV interface to provide a hole blocking effect and an enhancement of electron/hole recombination.
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