Abstract
Catalyst-referred etching (CARE) is an abrasive-free and damage-free polishing method that involves applying a catalytic reaction at the contact point of the catalyst surface and workpiece in a chemical solution. An atomically flat silicon carbide (SiC) wafer surface can be obtained by the CARE process. Recently, it was found that water can be used as a chemical solution, even in the case of SiC polishing. However, its current removal rate of 4H-SiC (0001) 4°off-axis substrate is only 2 nm/h and is expected to increase. In this study, the use of photoelectrochemical oxidation in combination with the CARE process using water was investigated, successfully increasing the removal rate up to approximately 100 nm/h.
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