Abstract
The potential of oxygen vacancies (OVs) has been demonstrated in controlling photocatalytic activities by altering the electronic and/or band structures of photocatalysts. The effects of oxygen vacancies on photocatalytic reaction processes are yet unclear. In this work, indium oxyhydroxide (InOOH), well known as a wide band p-block metal compound with OVs, was synthesized through a one-pot solvothermal method to explore the roles of OVs in photocatalytic oxidation and ring opening of toluene. The defect level introduced by OVs enhanced light absorption and charge carrier separation, while promoting the activation of reactants to generate active oxygen species. As such, the modified InOOH was validated to enhance the photocatalytic performance by lowering the reaction energy barrier of the key intermediates during toluene oxidation (relative to the pristine InOOH). More strikingly, the energy barrier for the formation of benzoic acid was reduced with the increasing number of OVs on InOOH (accompanied by the increases in the ring opening reaction rates), in line with the results derived from the in situ DRIFTS investigation and theoretical calculation. Accordingly, it is possible to explain the mechanism regulating the photocatalytic oxidation of toluene on defective InOOH. This work could provide an electronic insight into oxygen vacancy engineering as a new strategy to enhance the photocatalytic selectivity and activity for VOC degradation.
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