Abstract
The ultraviolet photodetector based on the photo-galvanic effect (PGE) has garnered extensive interest due to its capability of achieving photo-response without bias voltage. In this research, the catalytic characteristics of the Ga2SSe@GaN heterojunctions are calculated using first-principles calculations and the photocurrent is obtained through quantum transport simulations. Both the Ga2SSe/GaN and GaN/Ga2SSe heterojunctions exhibit the S-type band alignment with the stable built-in electric field. The Ga2SSe/GaN heterojunction demonstrates the high solar-to-hydrogen efficiency and low overpotentials, exhibiting excellent catalytic properties. Both the Ga2SSe/GaN and GaN/Ga2SSe heterojunctions have high electron mobilities. The photodetector based on the Ga2SSe/GaN heterojunction exhibits high photo-response in ultraviolet area. Our research corroborates that the Ga2SSe@GaN heterojunctions hold potential application in the fields of photocatalytic, electrocatalytic and photodetector.
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