Abstract
Preparation of GaAs, InP and Si single-crystal MOS solar cells by anodization in various modes is investigated. Both passive and active modes of anodization are found to increase the open-circuit voltage with respect to that of the bare Schottky cell. Best result is obtained by active anodization of n-GaAs. Passive anodization with a high formation voltage results in an anomalous reduction in photocurrent. A detailed analysis of cell currentvoltage characteristics indicates that cell behavior is dominated by interface-states.
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