Abstract
We describe an optical pumping injection cavity (OPIC) edge-emitting laser which employs GaSb/AlAsSb distributed Bragg reflectors above and below the type-II “W” active region to form an etalon for the pump beam. A pulsed W–OPIC laser emitting at 3.1–3.4 μm displays an incident threshold pump intensity of only 8 kW/cm2 at 300 K, and incident power conversion efficiencies per facet of 9% at 77 K and 4% at 275 K.
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