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Abstract
The present work describes practical ways of attenuating the severe limitations imposed by different kinds of areal inhomogeneities on the performance of large-area p+−n−n+ single-crystal silicon solar cells. The test devices were processed on 3-inch, lower-grade n-wafers and the minimization of the cells' cost was one of the desired objectives. A combination of simple design/technological approaches described in this work has ultimately led to the development of low-cost, high-efficiency (> 17%) 3-inch silicon solar cells with improved overall electro-optical performance. These devices possess short-circuit current densities similar to those of sophisticated laboratory samples prepared on high-quality, small-area silicon.
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