Abstract
This letter presents the power amplifier (PA) design for IEEE 802.11g WLAN applications by using InGaP/GaAs heterojunction bipolar transistors (HBTs) with the dual bias network as the linearizer to improve the output power capability and linearity. The final designed PA utilizes a 3.3-V supply voltage producing a good power-aided-efficiency (PAE) in 39.3% with 26.5-dBm output power and 18.1-dB gain for a 2.4-GHz OFDM/64-QAM stimulus, while the error vector magnitude (EVM) is maintained at 4.9%, satisfying the standard specifications
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