Abstract
A high power, high efficiency current mode class-D (CMCD) power amplifier (PA) is designed, implemented, and characterized based on LDMOS transistors. A drain efficiency of 71% was achieved with an output power of 20.3 W and a gain of 15.1 dB at 1 GHz. To our knowledge, this result represents the highest efficiency for the CMCD PAs based on LDMOS and the highest gain for all switching mode PAs that have been reported for high power applications (output power of more than 7 W), at frequencies above 800 MHz. Moreover, a wide-band lumped-component balun has been used for the CMCD PA which enables significant size reduction of this class of PA for L-band applications.
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