Abstract
Niobium nitride superconducting nanowire single-photon detectors were fabricated on thermally oxidized silicon substrates with large active areas of 30 μm × 30 μm. To achieve non-constricted detectors, we improved the film growth and electron beam lithography process to fabricate uniform 100-nm wide NbN nanowires with a fill factor of 50%. The devices showed 72.4% system detection efficiency (SDE) at 100-Hz dark count rate (DCR) and 74-ps timing jitter, measured at the fiber communication wavelength of 1550 nm. The highest SDE which is 81.2% when the DCR is ∼700 c/s appears at the wavelength of 1650 nm.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
