Abstract
The ability to grow perovskite solar cells in substrate configuration, where light enters the devices from the film side, allows the use of non-transparent flexible polymer and metal substrates. Furthermore, this configuration could facilitate processing directly on Cu(In,Ga)Se2 solar cells to realize ultrahigh-efficiency polycrystalline all-thin-film tandem devices. However, the inversion of conventional superstrate architecture imposes severe constraints on device processing and limits the electronic quality of the absorber and charge selective contacts. Here we report a device architecture that allows inverted semi-transparent planar perovskite solar cells with a high open-circuit voltage of 1.116 V and substantially improved efficiency of 16.1%. The substrate configuration perovskite devices show a temperature coefficient of −0.18% °C−1 and promising thermal and photo-stability. Importantly, the device exhibits a high average transmittance of 80.4% between 800 and 1,200 nm, which allows us to demonstrate polycrystalline all-thin-film tandem devices with efficiencies of 22.1% and 20.9% for Cu(In,Ga)Se2 and CuInSe2 bottom cells, respectively. Perovskite solar cells grown in substrate configuration would open a range of applications, if various challenges could be overcome. Towards that aim, Fu et al. present an architecture allowing inverted semi-transparent planar perovskite solar cells with open-circuit voltage of 1.116 V and 16.1% efficiency.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.