Abstract
A hybrid charge pump was developed in a 0.13- μm Bipolar-CMOS-DMOS (BCD) process which utilised high drain-source voltage MOS devices and low-voltage integrated metal-insulator-metal (MIM) capacitors. The design consisted of a zero-reversion loss cross-coupled stage and a new self-biased serial-parallel charge pump design. The latter has been shown to have an area reduction of 60% in comparison to a Schottky diode-based Dickson charge pump operating at the same frequency. Post-layout simulations were carried out which demonstrated a peak efficiency of 38% at the output voltage of 18.5 V; the maximum specified output voltage of 27 V was also achieved. A standalone serial-parallel charge pump was shown to have a better transient response and a flatter efficiency curve; these are preferable for time-sensitive applications with a requirement of a broader range of output currents. These findings have significant implications for reducing the total area of implantable high-voltage devices without sacrificing charge pump efficiency or maximum output voltage.
Highlights
Since the inception of the first transistor device many decades ago, the continuous miniaturization of transistor size has been the primary driving force of CMOS manufacturers
We present a fully integrated hybrid charge pump implemented in a 0.13-μm BCD process
The following section covers the results obtained from postlayout simulations as well as measurement results for the cross-coupled charge pump
Summary
Since the inception of the first transistor device many decades ago, the continuous miniaturization of transistor size has been the primary driving force of CMOS manufacturers. Analog front-ends (AFEs) for sensors and actuators depend on physical limits of the driven device and naturally-occurring signals This poses a contradictory requirement for electronic devices where miniaturisation and low power consumption are essential. Portable ultrasound front-ends, SPAD (single photon avalanche diode) imagers and electrical neuro-stimulator devices are good examples of a high voltage supply created locally in order to drive the sensor or actuator, while the rest of the analog/digital processing is done with a much lower supply voltage. In these systems, it is essential to integrate a low-area, highefficiency charge pump along with the AFE
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