Abstract
We design and experimentally demonstrate highly efficient Silicon Nitride based grating couplers with bottom distributed Bragg reflectors. All the layers were deposited using plasma enhanced chemical vapor deposition processing. We present gratings on two Silicon Nitride thickness (400 nm and 500 nm) platforms. On a 500 nm thick Silicon Nitride, we show a peak coupling efficiency of -2.29 dB/coupler at a wavelength of 1573 nm with a 1 dB bandwidth of 49 nm. On a 400 nm thick platform, we demonstrate a coupling efficiency of -2.58 dB/coupler at 1576 nm with a 1 dB bandwidth of 52 nm. The demonstrated coupling efficiency is the best reported as yet, for both 400 nm and 500 nm thick, plasma deposited Silicon Nitride platforms.
Highlights
Silicon Nitride (Si N ) is emerging as an alternative CMOS compatible material platform for onchip linear and non-linear applications
We present high-efficiency gratings for Transverse Electric (TE ) mode coupling in standalone 500 nm and 400 nm thick plasma enhanced chemical vapor deposition (PECVD) Si N platforms, which is an extended account of preliminary results reported in [33]
We have presented a detailed design, analysis and fabrication of grating couplers having high directionality
Summary
Silicon Nitride (Si N ) is emerging as an alternative CMOS compatible material platform for onchip linear and non-linear applications. Unlike Silicon, Si N is transparent in visible to mid-infrared wavelength range, making it attractive for applications ranging from bio to molecular sensing [1], [2]. Recent demonstration of various essential functional building blocks in Si N [3]–[5] clearly show the migration towards Si N as a platform for many applications. Si N offers various advantages, including low-loss, less sensitivity to temperature and fabrication variation, and CMOS fabrication technology compatibility. The ability to tune the thickness and refractive index offers additional flexibility in engineering dispersion for a broad range of wavelengths
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