Abstract
We report the first implementation of transparent electrodes in bottom-gate graphene transistors used for photo detection. Compared to conventional nontransparent electrodes, the transparent electrodes allow photons to transmit through to the graphene beneath, providing an enlarged absorption area and thereby giving rise to an enhancement of photocurrent generation. The devices are fabricated with an asymmetric metallization scheme and the experimental results show that the maximum photocurrent density using the transparent electrodes (ITO and Pd/ITO) is over two times higher than that using the nontransparent electrodes (Ti and Pd), indicating a significant enhancement in the performance of graphene photo sensors.
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