Abstract
Crack-free and low-dislocation-density Al x Ga 1-x N was achieved by low-temperature-deposited interlayer technique in combination with a lateral seeding epitaxy. We found that there was a strong correlation between the threading dislocation density and the PL intensity in the GaN/AIGaN MQWs. This new UV light emitting diode exhibits strong UV light output, having peak wavelength of 352 nm, a full width at half maximum as narrow as 6 nm and output power of 0.6 mW at 50 mA dc current injection.
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