Abstract
Monolithic power amplifiers using adequately ballasted high-efficiency GaInP/GaAs heterojunction bipolar transistors (HBT's) have been designed, fabricated, and tested. A maximum output power of 9 W with a power-added efficiency (PAE) of 42% and peak power-added efficiencies of 45% have been achieved at 10 GHz under critical long pulse conditions (pulse width=100 μs, duty cycle=10%). To our knowledge these results represent the best performance of any GaInP/GaAs HBT MMIC power amplifier considering efficiency, output power, operation frequency, and pulse conditions.
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