Abstract
The fabrication of a high performance GaAs0.7P0.3 solar cell on a transparent GaP substrate with an AM1.5 efficiency of 15.4% for a concentration ratio of 30× is reported for the first time. The measured transparency of the GaP substrate allows these cells to be mechanically stacked on silicon solar cells in a manner that should yield combined conversion efficiencies well over 25%. This mechanically stacked two-band-gap cell design is particularly attractive because it utilizes the already well-developed Si solar cell and because the materials foundation for the GaAs0.7P0.3 on GaP cell has been laid by work on light emitting diodes.
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