High-efficiency femtosecond ablation of silicon with GHz repetition rate laser source.

Abstract

We report on silicon ablation with a 20W GHz amplified femtosecond laser source. This novel laser delivers burst energies up to 400μJ, providing flexible intra-pulse repetition rates of 0.88 or 3.52GHz, up to 200 pulses with ∼350 fs pulse duration. High-efficiency, high-quality ablation can be achieved through optimally determining the number of pulses, intra-pulse repetition, and average pulse energy within a burst. Due to such optimization, we demonstrate a specific ablation rate of 2.5 mm3/min/W with a burst containing 200 pulses at 0.88GHz, which is the highest one reported so far for fs laser ablation, to the best of our knowledge. GHz ablation is sensitive to the selection of laser parameters. We conceptually discuss the contributions of the pulses within a burst to heat-accumulation-based incubation and material ablation.