Abstract
The Electroluminescence of p- type porous silicon during anodic oxidation (AO) in HCl solution has been investigated quantitatively. A typical EL peak wavelength at maximum intensity during AO was around 690 nm and the external light emitting efficiency at that time (ηm) was 0.12 %. The ηm was nearly proportional to anodic etching (AE) current density (DAE) and also increased with AE time (tAE). For the AO conditions, ηm increased abruptly as the AO current density (DAO) was reduced and it reached a maximum of 0.27% at minimum DAO condition. Furthermore, it was found that ηm was uniquely described by the AO voltage rise rate (dVAO/dt), which represents the effective injection current density into the PS microstructure surface.
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